BC856

厂商：
SEMTECH_ELEC
封装：
描述：
BC856 - PNP Silicon General Purpose Transistors - SEMTECH ELECTRONICS LTD.

数据手册：

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数据手册
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BC856 数据手册

BC856…BC858 PNP Silicon General Purpose Transistors for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Device Dissipation Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol -VCBO -VCEO -VEBO -IC -ICM Ptot RθJA TJ, Ts BC856 80 65 BC857 50 45 5 100 200 200 417 - 55 to + 150 BC858 30 30 Unit V V V mA mA mW O C/W O C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 21/06/2006 BC856…BC858 Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC857C, BC858C Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA Base Emitter On Voltage at -IC = 2 mA, -VCE = 5 V at -IC = 10 mA, -VCE = 5 V Collector Cutoff Current at -VCB = 30 V at -VCB = 30 V, TA = 150 OC Collector Emitter Breakdown Voltage at -IC = 10 µA BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series -V(BR)CES -V(BR)CES -V(BR)CES -V(BR)CEO -V(BR)CEO -V(BR)CEO -V(BR)CBO -V(BR)CBO -V(BR)CBO -V(BR)EBO -V(BR)EBO -V(BR)EBO fT Cob NF 80 50 30 65 45 30 80 50 30 5 5 5 100 4.5 10 V V V V V V V V V V V V MHz pF dB hFE hFE hFE -VCE(sat) -VCE(sat) -VBE(on) -VBE(on) -ICBO -ICBO 125 220 420 0.6 250 475 800 0.3 0.65 0.75 0.82 15 4 V V V V nA µA Symbol Min. Max. Unit Collector Emitter Breakdown Voltage at -IC = 10 mA Collector Base Breakdown Voltage at -IC = 10 µA Emitter Base Breakdown Voltage at -IE = 1 µA Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure at -IC = 0.2 mA, -VCE = 5 V, RS = 2 KΩ,tf = 1 KHz, BW = 200 Hz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 21/06/2006 BC856…BC858 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 21/06/2006

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BC856

### 物料型号 - 型号：BC856、BC857、BC858

### 器件简介 - 简介：这些是PNP型硅通用晶体管，适用于开关和放大应用。

### 引脚分配 - 引脚：1. 基极（Base），2. 发射极（Emitter），3. 集电极（Collector） - 封装：SOT-23塑料封装

### 参数特性 - 绝对最大额定值： - 集电极-基极电压（-VCBO）：BC856为80V，BC857为50V，BC858为30V - 集电极-发射极电压（-VCEO）：BC856为65V，BC857为45V，BC858为30V - 发射极-基极电压（-VEBO）：BC857为5V - 集电极电流（-IC）：BC857为100mA - 峰值集电极电流（-ICM）：BC856为200mA - 总器件耗散功率（Ptot）：BC858为200mW - 热阻，结到环境（RθJA）：BC858为417°C/W - 结和储存温度（TJ,Ts）：-55 to +150°C

### 功能详解 - 功能：这些晶体管在25°C的环境温度下的特性如下： - DC电流增益（hFE）：BC856A、BC857A、BC858A为125至250，BC856B、BC857B、BC858B为125至250，BC857C、BC858C为220至420和475至800 - 集电极-发射极饱和电压（-VCE(sat)）：BC856系列为0.3V，BC857系列为0.65V - 基极-发射极开启电压（-VBE(on)）：BC856系列为0.6V至0.75V，BC857系列为0.82V - 集电极截止电流（-ICBO）：BC856系列为15nA，BC857系列为4nA - 集电极-发射极击穿电压（-V(BR)CEO）：BC858系列为65V，BC856系列为45V，BC857系列为30V - 集电极-基极击穿电压（-V(BR)CBO）：BC856系列为80V，BC857系列为50V，BC858系列为30V - 发射极-基极击穿电压（-VBR)EBO）：BC856系列为5V - 电流增益-带宽积（fT）：100MHz - 输出电容（Cob）：4.5pF - 噪声系数（NF）：10dB

### 应用信息 - 应用：适用于开关和放大应用。

### 封装信息 - 封装：SOT-23塑料封装。

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