0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BC858

BC858

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    BC858 - PNP Silicon General Purpose Transistors - SEMTECH ELECTRONICS LTD.

  • 数据手册
  • 价格&库存
BC858 数据手册
BC856…BC858 PNP Silicon General Purpose Transistors for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Device Dissipation Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol -VCBO -VCEO -VEBO -IC -ICM Ptot RθJA TJ, Ts BC856 80 65 BC857 50 45 5 100 200 200 417 - 55 to + 150 BC858 30 30 Unit V V V mA mA mW O C/W O C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 21/06/2006 BC856…BC858 Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC857C, BC858C Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA Base Emitter On Voltage at -IC = 2 mA, -VCE = 5 V at -IC = 10 mA, -VCE = 5 V Collector Cutoff Current at -VCB = 30 V at -VCB = 30 V, TA = 150 OC Collector Emitter Breakdown Voltage at -IC = 10 µA BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series -V(BR)CES -V(BR)CES -V(BR)CES -V(BR)CEO -V(BR)CEO -V(BR)CEO -V(BR)CBO -V(BR)CBO -V(BR)CBO -V(BR)EBO -V(BR)EBO -V(BR)EBO fT Cob NF 80 50 30 65 45 30 80 50 30 5 5 5 100 4.5 10 V V V V V V V V V V V V MHz pF dB hFE hFE hFE -VCE(sat) -VCE(sat) -VBE(on) -VBE(on) -ICBO -ICBO 125 220 420 0.6 250 475 800 0.3 0.65 0.75 0.82 15 4 V V V V nA µA Symbol Min. Max. Unit Collector Emitter Breakdown Voltage at -IC = 10 mA Collector Base Breakdown Voltage at -IC = 10 µA Emitter Base Breakdown Voltage at -IE = 1 µA Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure at -IC = 0.2 mA, -VCE = 5 V, RS = 2 KΩ,tf = 1 KHz, BW = 200 Hz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 21/06/2006 BC856…BC858 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 21/06/2006
BC858 价格&库存

很抱歉,暂时无法提供与“BC858”相匹配的价格&库存,您可以联系我们找货

免费人工找货