BC859

BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the NPN transistor BC849 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta=25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Substrate Backside Junction Temperature Storage Temperature Range -VCBO -VCEO -VCES -VEBO -IC -ICM -IBM IEM Ptot RθJA RθSB TJ TS Value 30 30 30 5 100 200 200 200 200 450 320 150 -65 to +150 Unit V V V V mA mA mA mA mW O C/W C/W O O C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 BC859 Characteristics at Ta =25 OC Symbol h-Parameters at -VCE=5V, -IC=2mA, f=1KHz Current Gain Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse VoltageTransfer Ratio Current Gain Group A B C DC Current Gain at -VCE=5V, -IC=2mA Current Gain Group A B C hFE hFE hFE -VCEsat -VCEsat -VBE(on) -VBE(on) -ICBO -ICBO 110 200 420 220 450 800 hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre 1.6 3.2 6.0 220 330 600 2.7 4.5 8.7 18 30 60 1.5 10 2 10 3 10 . . . -4 Min. Typ. Max. 4.5 8.5 15 30 60 110 - Unit KΩ KΩ KΩ µS µS µS - -4 -4 Collector–Emitter Saturation Voltage at -IC=10mA, -IB=0.5mA at -IC=100mA, -IB=5mA Base-Emitter On Voltage at -IC=2mA, -VCE=5V at -IC=10mA, -VCE=5V Collector Cutoff Current at -VCB=30V at -VCB=30V, TJ=150OC 600 - - 300 650 750 820 15 5 mV mV mV mV nA µA SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 BC859 Characteristics at Tamb=25 OC Symbol Gain Bandwidth Product at -VCE=5V, -IC=10mA, f=100MHz Collector Base Capacitance at -VCB=10V, f=1.0MHz Noise Figure at -IC=200µA, -VCE=5V, RG=2KΩ, f=1.0kHz, Δf=200Hz at -IC=200µA, -VCE=5V, RG=2KΩ, f=30...15000Hz F F 4 4 dB dB Min. Typ. Max. Unit fT CCBO - 150 - 6 MHz pF SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 BC859 Admissible power dissipation versus temperature of substrate backside Collector current versus base emitter voltage mW 500 mA 2 10 5 4 3 2 -VCE=5V Tamb=25 oC 400 10 P tot 300 -IC 5 4 3 2 200 1 100 5 4 3 2 0 0 100 200 oC TSB 10 -1 0 0.5 1V -VBE Pulse thermal resistance versus pulse duration (normalized) Gain bandwidth product versus collector current 10 5 4 3 2 0.5 MHz 10 3 7 5 4 3 Tamb=25 o C 0.2 0.1 0.05 0.02 0.01 10 -1 r thSB R thSB 5 4 3 2 fT 2 -VCE=10V 5V 2V 10 2 7 5 4 tp tp v= T T PI 3 2 10 -2 5 4 3 2 5 -3 v=0 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1s tp 10 0.1 2 5 1 2 5 10 2 5 100mA -IC SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 BC859 Collector saturation voltage versus collector current DC current gain versus collector current V 0.5 -I C/-I B =20 10 3 -VCE=5V 5 4 3 2 100 C o o 0.4 10 2 -VCEsat 0.3 h FE 5 4 3 2 Tamb=100 C o Tamb =2 5 C -50 C o 0.2 o 10 25 C 5 4 3 2 0.1 -50 o C 0 10 -1 2 5 1 2 5 10 2 5 102 mA 1 10 -2 10-1 1 10 10 2 mA -I C -I C Noise figure versus collector current Noise figure versus collector emitter voltage dB 20 18 16 F 14 12 10 -VCE=5V f=1KHz Tamb=25o C 100K dB 20 18 16 -I C=0.2mA R G=2K f=1KHz o Tamb=25 C 500 R G=1M 10K F 14 12 1K 10 8 6 8 6 4 2 0 10 -3 10 -2 10 -1 1 10 mA -I C 500 4 2 0 10 -1 2 5 1 2 5 10 2 5 102 V -VCE SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 BC859 Collector-Base cutoff current versus ambient temperature Collector-base capacitance, Emitter-base capacitance versus reverse bias voltage pF 20 18 Tamb=25 o C nA 10 4 10 3 16 14 CCBO CEBO 12 10 CEBO -I CBO 10 2 10 8 6 CCBO 1 Test voltage -VCBO: equal to the given maximum value -VCEO typical maximum 4 2 o 10 -1 0 100 0 0.1 2 5 200 C Tj 1 2 5 10V -VCBO,-VEBO Noise figure versus collector current Relative h-parameters versus collector current 10 2 6 4 dB 20 18 16 -VCE=5V f=120Hz Tamb=25o C R G=1M 100K 10K 1K 2 he(-I C) he(-I C=2mA) 6 4 2 10 h ie F 14 500 12 10 h re 8 6 1 6 4 2 h fe 4 2 h oe 4 10 -1 10 -1 2 -VCE=5V Tamb=25o C 0 10 -3 1 2 4 10mA 10 -2 10 -1 1 10 mA -I C -I C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005