BCV27 / BCV47
NPN Darlington Transistors
for preamplifier input applications
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 C) Parameter
O
Symbol BCV27 BCV47 BCV27 BCV47 VCBO VCEO VEBO IC ICM IB Ptot Tj TS Symbol BCV27 BCV47 BCV27 BCV47 BCV27 BCV47 BCV27 BCV47 hFE hFE hFE hFE hFE hFE ICBO IEBO BCV27 BCV47 BCV27 BCV47 V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) VBE(on) fT Min. 4000 2000 10000 4000 20000 10000 40 80 30 60 10 -
Value 40 80 30 60 10 500 800 100 200 150 - 65 to + 150 Typ. 220 Max. 100 100 100 1 1.5 1.4 -
Unit V V V mA mA mA mW
O
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Range
C C Unit nA nA V V V V V V MHz
O
Characteristics at Ta = 25 C Parameter DC Current Gain at VCE = 5 V, IC = 1 mA
O
at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 100 mA Collector Cutoff Current at VCB = 30 V at VCB = 60 V Emitter Cutoff Current at VEB = 10 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter On-state Voltage at IC = 10 mA, VCE = 5 V Transition Frequency at VCE = 5 V, IC = 30 mA, f = 100 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 18/08/2007
BCV27 / BCV47
Power Dissipation vs Ambient Temperature
300
Power Dissipation: Ptot (mW)
250
200
150
100
50 0 0 25 50 75 100
O
125
150
Ambient Temperature: Ta ( C)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 18/08/2007
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