BD135T

BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings (Ta=25 OC) Parameter Collector Emitter Voltage Collector Emitter Voltage ( RBE = 1 KΩ) Collector Base Voltage Emitter Base Voltage Collector Current - Continuous 1) Collector Current - Peak Base Current - Continuous Total Power Dissipation @ TA=25 OC Derate above 25 OC Total Power Dissipation @ TC=25 OC Derate above 25 OC Total Power Dissipation @ TC=70 OC Operating and Storage Junction Temperature Range Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol VCEO VCER VCBO VEBO IC ICM IB PD PD PD TJ, Ts RθJA RθJC Value BD135T BD137T BD139T 45 45 45 60 60 60 5 1.5 2 0.5 1.25 10 12.5 100 8 -55 to +150 100 10 O Unit V V V V A A W mW/ OC W mW/ OC W O 80 100 100 C C/W C/W O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/03/2006 BD135T / BD137T / BD139T Characteristics at Ta=25 OC Parameter DC Current Gain at VCE = 2 V, IC = 5 mA at VCE = 2 V, IC = 500 mA at VCE = 2 V, IC = 150 mA -6 -10 -16 -25 Collector Emitter Sustaining Voltage at IC = 30 mA at IC=10mA Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter On Voltage at IC = 500 mA, VCE = 2 V BD135T BD137T BD139T VCEO(sus) VCEO(sus) VCEO(sus) ICBO IEBO VCE(sat) VBE(on) 45 60 80 0.1 10 0.5 1 V V V µA µA V V hFE hFE hFE hFE hFE hFE 25 25 40 63 100 160 100 160 250 400 Symbol Min. Max. Unit SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/03/2006