BFS20

BFS20 NPN Silicon Epitaxial Planar Transistor High frequency transistor for IF and VHF applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 20 4 25 200 150 - 65 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 7 mA Collector Cutoff Current at VCB = 20 V Emitter Cutoff Current at VEB = 4 V Base Emitter Voltage at VCE = 10 V, IC = 7 mA Transition Frequency at VCE = 10 V, IC = 5 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Symbol hFE ICBO IEBO VBE fT COB Min. 40 275 Typ. 450 1 Max. 140 100 100 0.9 Unit nA µA V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/11/2006