0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BZX85C62

BZX85C62

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    BZX85C62 - SILICON PLANAR POWER ZENER DIODES - SEMTECH ELECTRONICS LTD.

  • 详情介绍
  • 数据手册
  • 价格&库存
BZX85C62 数据手册
BZX85C SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Other tolerances and higher Zener voltages are upon request. Black Cathode Band Black Part No. Black "ST" Brand Max. 0.7 Max. 2.8 Min. 25.4 XXX ST Max. 4.2 Min. 25.4 Glass Case DO-41 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range 1) Symbol Ptot Tj TS Value 1.3 1) Unit W O 200 - 55 to + 200 C C O Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 200 mA 1) Symbol RthA VF Max. 130 1) Unit K/W V 1.2 Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/06/2007 BZX85C Zener Voltage Range 1) Type VZnom V lZT mA for VZT V 2.5...2.9 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4...4.6 4.4...5 4.8...5.4 5.2...6 5.8...6.6 6.4...7.2 7...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 20.8...23.3 22.8...25.6 25.1...28.9 28...32 31...35 34...38 37...41 40...46 44...50 48...54 52...60 58...66 64...72 70...79 77...87 85...96 94...106 104...116 114...127 124...141 138...156 153...171 168...191 188...212 Maximum Dynamic Resistance rZJT Ω 20 20 20 15 15 13 13 10 7 4 3.5 3 5 5 7 8 9 10 15 15 20 24 25 25 30 30 35 40 50 50 90 115 120 125 130 135 200 250 350 450 550 700 1000 1100 1200 1500 rZJK Ω 400 400 400 500 500 500 600 500 400 300 300 200 200 200 200 300 350 400 500 500 500 600 600 600 750 1000 1000 1000 1000 1000 1500 1500 2000 2000 2000 2000 3000 3000 3000 4000 4500 5000 6000 6500 7000 8000 at IZK mA 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Maximum Reverse Leakage Current IR µA 150 100 40 20 10 3 3 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 at VR V 1 1 1 1 1 1 1 1.5 2 3 4 4.5 6.2 6.8 7 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 BZX85C2V7 2.7 80 BZX85C3V0 3.0 80 BZX85C3V3 3.3 70 BZX85C3V6 3.6 60 BZX85C3V9 3.9 60 BZX85C4V3 4.3 50 BZX85C4V7 4.7 45 BZX85C5V1 5.1 45 BZX85C5V6 5.6 45 BZX85C6V2 6.2 35 BZX85C6V8 6.8 35 BZX85C7V5 7.5 35 BZX85C8V2 8.2 25 BZX85C9V1 9.1 25 BZX85C10 10 25 BZX85C11 11 20 BZX85C12 12 20 BZX85C13 13 20 BZX85C15 15 15 BZX85C16 16 15 BZX85C18 18 15 BZX85C20 20 10 BZX85C22 22 10 BZX85C24 24 10 BZX85C27 27 8 BZX85C30 30 8 BZX85C33 33 8 BZX85C36 36 8 BZX85C39 39 6 BZX85C43 43 6 BZX85C47 47 4 BZX85C51 51 4 BZX85C56 56 4 BZX85C62 62 4 BZX85C68 68 4 BZX85C75 75 4 BZX85C82 82 2.7 BZX85C91 91 2.7 BZX85C100 100 2.7 BZX85C110 110 2.7 BZX85C120 120 2 BZX85C130 130 2 BZX85C150 150 2 BZX85C160 160 1.5 BZX85C180 180 1.5 BZX85C200 200 1.5 1) Tested with pulses tp = 20 ms. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/06/2007 BZX85C Breakdown characteristics at Tj=constant (pulsed) mA 240 C3V9 200 C5V6 Iz 160 C6V8 C 8V2 120 C10 C12 80 C4V7 BZX 85... Tj=25o C C15 40 C18 C22 0 0 1 2 3 4 5 6 7 8 9 10 Vz 11 12 13 14 15 16 17 18 19 20 21 22 23 24V Breakdown characteristics at Tj=constant (pulsed) mA 50 Iz 40 C33 C39 30 C47 C68 C27 Tj=25 oC BZX 85... 20 C 75 C 91 10 0 20 25 30 35 40 45 50 55 60 Vz 65 70 75 80 85 90 95V Admissible power dissipation Versus ambient temperature Valid provided that leads are kept at ambient Temperature at a distance of 10 mm from case w Ptot Tamb SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/06/2007
BZX85C62
### 物料型号 - BZX85C系列,包含多个型号如BZX85C2V7、BZX85C3V0、BZX85C3V3等,直到BZX85C200。

### 器件简介 - 这些是硅平面功率齐纳二极管,用于稳定和限幅电路,具有高功率等级。齐纳电压根据国际E24标准分级,其他公差和更高的齐纳电压可以根据要求提供。

### 引脚分配 - 器件采用玻璃封装DO-41封装形式,具体尺寸以毫米为单位。

### 参数特性 - 绝对最大额定值: - 功率耗散(Ptot):1.3W - 结温(TJ):200°C - 存储温度范围(Ts):-55至+200°C

- 特性在Ta=25°C时: - 热阻(RthA):130K/W - 正向电压(VF)在200mA时:1.2V

### 功能详解 - BZX85C系列二极管具有不同的齐纳电压范围,最大动态电阻、最大反向漏电流等参数。文档中列出了从2.7V到200V不同电压等级的详细参数。

### 应用信息 - 该系列二极管适用于需要高功率等级的稳定和限幅电路。

### 封装信息 - 采用玻璃封装DO-41封装形式。
BZX85C62 价格&库存

很抱歉,暂时无法提供与“BZX85C62”相匹配的价格&库存,您可以联系我们找货

免费人工找货