ESD6V8CAW

ESD6V8CAW SILICON EPITAXIAL PLANAR DIODES For protecting against ESD 3 1 2 Marking Code: MB Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol PD TJ Ts Value 200 125 - 55 to + 125 Unit mW O C C O Electrical Characteristics at Ta = 25 OC Parameter Zener Voltage at IZ = 5 mA 1) Symbol VZ ZZ ZZK IR CT Min. 6.5 - Typ. 6.8 6 Max. 7.1 50 100 0.5 - Unit V Ω Ω µA pF Dynamic Impedance at IZ = 5 mA Knee Dynamic Impedance at IZ = 0.5 mA Reverse Current at VR = 5 V Total Capacitance at VR = 0 V, f = 1 MHz 1) Tested with pulses tp = 20 ms. ESD Immunity Level Parameter ESD Immunity Level at IEC61000-4-2 (Contact Discharge) Value ±8 Unit KV SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/04/2007 ESD6V8CAW SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/04/2007