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GS1J

GS1J

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    GS1J - SURFACE MOUNT GENERAL RECTIFIER - SEMTECH ELECTRONICS LTD.

  • 详情介绍
  • 数据手册
  • 价格&库存
GS1J 数据手册
GS1A THRU GS1M SURFACE MOUNT GENERAL RECTIFIER Reverse Voltage – 50 to 1000 V Forward Current – 1 A Features • For surface mounted applications • Low reverse leakage • Built-in strain relief, ideal for automated placement • High forward surge current capability • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Mechanical Data • Case: SMA (DO-214AC), molded plastic • Terminals: Solder plated, solderable per MIL-STD-750 method 2026 • Polarity: Color band denotes cathode band • Mounting position: Any Absolute Maximum Ratings and Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Symbols GS1A GS1B GS1D GS1G GS1J GS1K GS1M Units Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL = 110 OC Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC Method) Maximum Instantaneous Forward Voltage at 1A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance 1) Typical Thermal Resistance 2) VRRM VRMS VDC I(AV) 50 35 50 100 70 100 200 140 200 400 280 400 1 600 420 600 800 560 800 1000 700 1000 V V V A IFSM VF IR CJ RθJA TJ ,TS 30 1.1 5 50 15 75 - 65 to+ 175 O A V µA pF C/W O at TA = 25 C atTA = 100 OC O Operating and Storage Temperature Range 1) 2) C Measured at 1 MHz and applied VR = 4 V. P.C.B. mounted with 0.2 x 0.2" ( 5 X 5 mm) copper pad areas. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/04/2008 GS1A THRU GS1M Forward current derating curve 1.0 PEAK FORWARD SURGE CURRENT, A Average forward rectified current, A MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0.8 0.6 0.4 0.2 single phase half wave 60Hz rsistive or inductive load 30 25 20 15 10 5 1 10 NUMBER OF CYCLES AT 60 Hz 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 50 100 150 175 100 Ambient Temperature ( C ) TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, mA TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, A 1000 20 10 100 TJ=150 C 10 TJ=100 C 1 1 0.1 0.1 TJ=25 C 0.01 0.6 0.8 1.0 1.2 1.4 1.5 0.01 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE, % INSTANTANEOUS FORWARD VOLTAGE, V TYPICAL JUNCTION CAPACITANCE 200 100 JUNCTION CAPACITANCE,pF TRANSIENT THERMAL IMPEDANCE, C/W Tj=25 C o TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 10 1 0.1 0.1 1 10 100 REVERSE VOLTAGE, VOLTS 0.1 0.01 0.1 1 10 100 t, PULSE DURATION,sec. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/04/2008
GS1J
1. 物料型号: - 型号系列:GS1A至GS1M,为表面贴装通用整流器。

2. 器件简介: - 这些器件适用于表面贴装应用,具有低反向漏电流、内置应力消除(适合自动化放置)、高正向浪涌电流能力,塑料封装符合UL94V-0可燃性等级。

3. 引脚分配: - 封装为SMA(DO-214AC),塑封塑料,引脚为镀锡,符合MIL-STD-750方法2026的可焊性,极性由色带表示阴极。

4. 参数特性: - 最高反向峰值电压(VRRM):50至1000V不等。 - 最大RMS电压(VRMS):35至700V不等。 - 最大直流阻断电压(Vpc):50至1000V不等。 - 最大平均正向整流电流(I(AV)):在110°C时为1A。 - 正向浪涌电流(IFSM):30A,8.3ms单半波,叠加在额定负载上的正弦波(JEDEC方法)。 - 最大瞬时正向电压在1A时(VF):1.1V。 - 25°C时最大直流反向电流(IR):5至50μA不等。 - 典型结电容(CJ):15pF。 - 典型热阻(ROJA):75°C/W。 - 工作和存储温度范围(TJ.Ts):-65至+175°C。

5. 功能详解: - 器件为表面贴装设计,具有低反向漏电流和高正向浪涌电流能力,适合自动化放置,符合特定的可燃性等级。

6. 应用信息: - 适用于需要表面贴装整流器的应用场合,如电源、电机控制等。

7. 封装信息: - 封装类型为SMA(DO-214AC),塑封塑料,引脚镀锡,极性由色带表示。

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