LL355

LL355 SWITECHING DIODE Applications • High speed switching Features • • High Speed (tr = 1.2ns Typ.) High reliability with high surge current handling capability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Junction temperature Storage temperature Symbol VRM VR IFM Io Isurge TJ Tstg Limits 90 80 225 100 500 125 -55 to +125 Unit V V mA mA mA O O C C Characteristics at Ta = 25 OC Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min VF IR CT trr Typ Max 1.2 0.1 3 4 Unit V µA pF ns Conditions IF = 100mA VR = 80V VR = 0.5V, f = 1MHZ VR = 6V, IF = 10mA, RL = 100Ω SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 30/08/2002