LL916

LL916, LL916A, LL916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings (Ta = 25oC) Symbol Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1 second Pulse width = 1 microsecond Total Device Dissipation o Derate above 25 C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range WIV IO IF if Value 75 200 300 400 Unit V mA mA mA if(surge) if(surge) PD RθJA Tj TS 1 4 500 3.33 300 175 -65 to +200 A A mW o mW/ C o C/W O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/04/2002 LL916, LL916A, LL916B Characteristics at TA = 25oC Symbol Breakdown Voltage at IR = 100μA at IR = 5μA Reverse Current at VR = 20V at VR = 20V, TA = 150 C at VR = 75V Forward Voltage at IF = 5mA at IF = 10mA at IF = 20mA at IF = 30mA Diode Capacitance at f = 1MHz Reverse Recovery Time at IF = 10mA, VR = 6V(60mA), IRR = 1.0mA, RL = 100Ω LL916B LL916 LL916A LL916B VF VF VF VF 630 730 1 1 1 mV V V V o Min. Typ. Max. Unit BV BV 100 75 - - V V IR IR IR - - 25 50 5 nA μA μA CO trr - - 2 pF - - 4 ns Notes:(1) These ratings are based on a maximum junction temperature of 200 degrees C. (2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/04/2002 LL916, LL916A, LL916B Typical Characteristics REVERSE VOLTAGE vs REVERSE CURRENT BV-1.0 to 100 uA VR -REVERSE VOLTAGE (V) I R -REVERSE CURRENT(nA) REVERSE CURRENT vs REVERSE VOLTAGE I R -10 to 100 V 120 100 80 60 40 20 0 10 20 30 50 70 100 Ta=25 C o 160 150 140 130 120 110 1 2 Ta=25 C o 3 5 10 20 30 50 100 VR -REVERSE VOLTAGE (V) GENERAL RULE:The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature I R -REVERSE CURRENT (uA) FORWARD VOLTAGE vs FORWARD CURRENT VF -1 to 100 uA 550 Ta=25 C 500 450 400 350 300 250 1 2 3 5 10 20 30 50 100 I F -FORWARD CURRENT (uA) VF -FORWARD VOLTAGE (mV) VF -FORWARD VOLTAGE (mV) o FORWARD VOLTAGE vs FORWARD CURRENT VF -0.1 to 100 mA 750 Ta=25 C 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 10 I F -FORWARD CURRENT (mA) o FORWARD VOLTAGE vs FORWARD CURRENT VF -10 to 800 mA Ta=25 C 1.4 1.2 1 0.8 0.6 10 20 30 50 100 200 300 500 o FORWARD VOLTAGE vs AMBIENT TEMPERATURE VF -0.01 - 20 mA (-40 to+65 Deg C) VF -FORWARD VOLTAGE (V) VF -FORWARD VOLTAGE (V) 1.6 900 800 700 600 500 400 300 0.01 0.03 0.1 0.3 1 3 10 Ta=+65 C o Typical Ta=-40 C o o Ta=+25 C I F -FORWARD CURRENT (mA) I F -FORWARD CURRENT (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/04/2002 LL916, LL916A, LL916B Typical Characteristics CAPACITANCE vs REVERSE VOLTAGE VR=0.0 to 15 V Ta=25 C CAPACITANCE (pF) o REVERSE RECOVERY TIME vs REVERSE CURRENT REVERSE RECOVERY (nS) 0.9 4 3.5 3 2.5 2 1.5 1 10 20 30 40 50 60 Ta=25 C o 0.85 0.8 0.75 0 2 4 6 8 10 12 14 REVERSE VOLTAGE (V) REVERSE CURRENT (mA) I F =10mA-I RR =1.0mA-Rloop=100 Ohms P D -POWER DISSIPATION (mW) Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) 500 400 I-CURRENT (mA) IR -F OR W AR POWER DERATING CURVE 500 DO-35 400 D 300 200 100 0 0 I O-A CU R VER RE AGE NT 300 SOT-23 200 REC T IFIE ST EA DC ST URR A ENT -mA TE-m DY A 100 50 100 150 0 0 50 100 150 o 150 TA-AMBIENT TEMPERATURE ( C) o I O-AVERAGE TEMPERATURE ( C) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/04/2002