MCL80G
SILICON EPITAXIAL PLANAR DIODE
LS-31
Features • • • • High speed High reliability Fits onto SOD 323 / SOT 23 footprints Micro Melf package
Applications Ultra high speed switching
Absolute Maximum Ratings (Ta = 25OC)
Parameter Peak Reverse Voltage DC Reverse Voltage Peak Forward Current Mean Rectifying Current Surge Current(1μS) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IFM IO Isurge Ptot Tj Ts Value 80 80 300 100 4 200 150 -55 … +150 Unit V V mA mA A mW
O O
C C
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 09/04/2003
MCL80G
Characteristics at
Parameter Forward Voltage Reverse Current Diode Capacitance Reverse Recovery Time
Ta = 25 OC
Test Conditions IF = 100mA VR = 70V VR = 6V, f = 1MHZ IF = 5mA, VR = 6V Symbol VF IR CD trr Min Typ Max 1.2 0.1 3.5 4 Unit V μA pF ns
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 09/04/2003
MCL80G
Forward Characteristics
50 20
Ta=85 C
Power Attenuation Curve
Power Dissipation - Pd/Pd max(%)
REVERSE CHARACTERISTICS 1000 Ta=100 oC 100
REVERSE CURRENT, nA
125 100
75 oC 50 oC 25 oC
Forward Current-mA
10 5 2 1 0.5 0.2 0.1 0
50 C 25 C 0C -30 C
75 50 25
10
1
0 oC -25 oC
0.1
0
25
50
75
100 125 150
Ta-Ambient Temperature- oC
-0.2 -0.4 -0.6 -0.8 -1
-1.2 -1.4 -1.6
0.01 0 10 20 30 40 50 REVERSE VOLTAGE,V
Forward Voltage-V
Capacitance 10 f=1MHz
Reverse Recovery Time (ns)
Reverse Recovery Time
VR =6V
0.01 F
DUT
4
Capacitance (pF)
PULSE GENERATOR OUTPUT 50
SAMPLING OSCILLOSCOPE
5
8 6
INPUT
2
4
2
100ns
0
4
8
12
16
20
0
2
4
6
8
10
Reverse Voltage ( V )
Forward Current ( mA )
OUTPUT
trr 0 0.1 IR IR
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 09/04/2003
50
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