MMBD142W

MMBD142W SILICON EPITAXIAL PLANAR SWITCHING DIODE 3 Applications • for switching circuits 1 2 Marking Code: D3 Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Forward Current Peak Forward Current Non-repetitive Peak Forward Surge Current (t = 1 s) Junction Temperature Storage Temperature Range Symbol VRM VR IF IFM IFSM TJ Ts Value 80 80 100 225 500 150 - 55 to + 150 Unit V V mA mA mA O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 75 V Reverse Voltage at IR = 100 µA Terminal Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, Irr = 0.1 • IR, RL = 100 Ω Symbol VF IR VR Ct trr Min. 80 Max. 1.2 0.1 15 10 Unit V µA V pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/10/2007 MMBD142W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/10/2007