MMBD202CAW

MMBD202CAW SILICON EPITAXIAL PLANAR SWITCHING DIODE Application • Ultra high speed switching 3 1 2 Marking Code: YX Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current (Single) Maximum Peak Forward Current (Single) Surge Current at t = 1 µs (Single) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Ptot Tj Ts Value 80 80 100 300 4 200 150 - 55 to + 150 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Capacitance Between Terminals at VR = 6 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 5 mA, RL = 50 Ω Symbol VF IR CT trr Max. 1.2 0.1 3.5 4 Unit V µA pF ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 24/05/2008 MMBD202CAW SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 24/05/2008