MMBD202CCW

MMBD202CCW SILICON EPITAXIAL PLANAR SWITCHING DIODE Application • Ultra high speed switching 3 1 2 Marking Code: PH Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (t = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Ptot Tj Ts Value 80 80 100 300 4 200 150 - 55 to + 150 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Total Capacitance at VR = 6 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 5 mA, RL = 50 Ω Symbol VF IR CT trr Max. 1.2 0.1 3.5 4 Unit V µA pF ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/10/2008 MMBD202CCW SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/10/2008