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MMBT2222AW

MMBT2222AW

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    MMBT2222AW - NPN Silicon Epitaxial Planar Medium Power Transistor - SEMTECH ELECTRONICS LTD.

  • 数据手册
  • 价格&库存
MMBT2222AW 数据手册
MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS 60 30 5 600 200 150 -55 to +150 Value MMBT2222W MMBT2222AW 75 40 6 V V V mA mW O Unit C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2006 MMBT2222W / MMBT2222AW Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 10 V, IC = 150 mA at VCE = 10 V, IC = 500 mA Collector Base Voltage at IC = 10 µA Collector Emitter Voltage at IC = 10 mA Emitter Base Voltage at IE = 10 µA Collector Base Cutoff Current at VCB = 50 V at VCB = 60 V Emitter Base Cutoff Current at VEB = 3 V Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW hFE hFE hFE hFE hFE hFE hFE VCBO 35 50 75 50 100 30 40 60 75 30 40 5 6 0.6 300 300 100 100 100 0.4 0.3 1.6 1 1.3 1.2 2.6 2 8 25 10 25 225 60 V Symbol Min. Max. Unit VCEO V VEBO V ICBO IEBO nA nA MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW VCE(sat) V VBE(sat) V Transition Frequency at VCE = 20 V, -IE = 20 mA, f = 100 MHz Collector Output Capacitance at VCB = 10 V, f = 100 KHz Emitter Input Capacitance at VEB = 0.5 V, f = 100 KHz Delay Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA Rise Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA Storage Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA Fall Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA fT Cob Cib td tr tstg tf MHz pF pF ns ns ns ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2006 MMBT2222W / MMBT2222AW SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2006 MMBT2222W / MMBT2222AW SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2006
MMBT2222AW 价格&库存

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MMBT2222AWT1G
  •  国内价格
  • 5+0.18301
  • 20+0.16705
  • 100+0.15109
  • 500+0.13513
  • 1000+0.12768
  • 2000+0.12236

库存:1926