MMBT2222W

MMBT2222W

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    MMBT2222W - NPN Silicon Epitaxial Planar Medium Power Transistor - SEMTECH ELECTRONICS LTD.

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT2222W 数据手册
MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS 60 30 5 600 200 150 -55 to +150 Value MMBT2222W MMBT2222AW 75 40 6 V V V mA mW O Unit C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2006 MMBT2222W / MMBT2222AW Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 10 V, IC = 150 mA at VCE = 10 V, IC = 500 mA Collector Base Voltage at IC = 10 µA Collector Emitter Voltage at IC = 10 mA Emitter Base Voltage at IE = 10 µA Collector Base Cutoff Current at VCB = 50 V at VCB = 60 V Emitter Base Cutoff Current at VEB = 3 V Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW hFE hFE hFE hFE hFE hFE hFE VCBO 35 50 75 50 100 30 40 60 75 30 40 5 6 0.6 300 300 100 100 100 0.4 0.3 1.6 1 1.3 1.2 2.6 2 8 25 10 25 225 60 V Symbol Min. Max. Unit VCEO V VEBO V ICBO IEBO nA nA MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW VCE(sat) V VBE(sat) V Transition Frequency at VCE = 20 V, -IE = 20 mA, f = 100 MHz Collector Output Capacitance at VCB = 10 V, f = 100 KHz Emitter Input Capacitance at VEB = 0.5 V, f = 100 KHz Delay Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA Rise Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA Storage Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA Fall Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA fT Cob Cib td tr tstg tf MHz pF pF ns ns ns ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2006 MMBT2222W / MMBT2222AW SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2006 MMBT2222W / MMBT2222AW SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2006
MMBT2222W
物料型号: - MMBT2222W - MMBT2222AW

器件简介: - NPN硅外延平面中功率晶体管,适用于开关和放大应用。

引脚分配: - 1. 基极(Base) - 2. 发射极(Emitter) - 3. 集电极(Collector) - 封装形式为SOT-323塑料封装。

参数特性: - 绝对最大额定值(@Ta=25°C): - 集电极-基极电压(VCBO):60V(MMBT2222W),75V(MMBT2222AW) - 集电极-发射极电压(VCEO):30V(MMBT2222W),40V(MMBT2222AW) - 发射极-基极电压(VEBO):5V - 集电极电流(Ic):600mA - 总功率耗散(Ptot):200mW - 结温(T):150°C - 存储温度范围(Ts):-55至+150°C

功能详解: - 直流电流增益(hFE)在不同工作条件下的最小值和最大值。 - 集电极-基极电压(VCBO)和集电极-发射极电压(VCEO)在不同条件下的值。 - 发射极-基极截止电流(ICEO)和发射极-基极截止电流(EBO)。 - 集电极-发射极饱和电压(VCE(sat))和基极-发射极饱和电压(VBE(sat))。 - 过渡频率(fT)和存储时间(tstg)等参数。

应用信息: - 该晶体管适用于开关和放大应用。

封装信息: - SOT-323塑料封装。
MMBT2222W 价格&库存

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