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MMBT2369

MMBT2369

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    MMBT2369 - NPN Silicon Switching Transistor - SEMTECH ELECTRONICS LTD.

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT2369 数据手册
MMBT2369 / MMBT2369A NPN Silicon Switching Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation FR-5 Board Derate above 25 OC 1) Value 40 15 40 4.5 200 200 1.8 556 -55 to +150 Unit V V V V mA mW mW/ OC O VCBO VCEO VCES VEBO IC Ptot RθJA TJ,TS Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1) C/W O C FR-5=1×0.75×0.062 in. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBT2369 / MMBT2369A Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=1V, IC=10mA at VCE=1V, IC=10mA at VCE=0.35V, IC=10mA at VCE=0.35V, IC=10mA,TA=-55 C O Min. 40 40 20 30 20 20 0.7 15 40 40 4.5 Max. 120 120 0.25 0.2 0.3 0.25 0.5 0.85 1.02 1.15 1.60 0.4 0.4 30 - Unit V V V V V V V V V µA µA µA V V V V MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369 MMBT2369A MMBT2369 MMBT2369A o hFE hFE hFE hFE hFE hFE hFE VCEsat VCEsat VCEsat VCEsat VCEsat VBEsat VBEsat VBEsat VBEsat ICES ICBO at VCE=0.4V, IC=30mA at VCE=2.0V, IC=100mA at VCE=1.0V, IC=100mA Collector Emitter Saturation Voltage at IC=10mA, IB=1mA at IC=10mA, IB=1mA at IC=10mA, IB=1mA,TA=+125 C at IC=30mA, IB=3.0mA at IC=100mA, IB=10mA Base Emitter Saturation Voltage at IC=10mA, IB=1mA at IC=10mA, IB=1mA,TA=-55 C O MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369A at IC=30mA, IB=3mA at IC=100mA, IB=10mA Collector Cutoff Current at VCE=20V Collector Cutoff Current at VCB=20V at VCB=20V, TA = 150 C O ICBO V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO Collector Emitter Breakdown Voltage at IC=10mA Collector Base Breakdown Voltage at IC=10µA Collector Emitter Breakdown Voltage at IC=10µA Emitter Base Breakdown Voltage at IE=10µA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBT2369 / MMBT2369A Characteristics at Tamb=25 OC Symbol Output Capacitance at VCB=5V, f=1MHz Small Signal Current Gain at IC=10mA, VCE=10V, f=100MHz Storage Time IB1= IB2= IC =10mA Turn-On Time VCC=3V, IC=10mA, IB1=3mA Turn-Off Time VCC=3V, IC=10mA, IB1=3.0mA, IB2=1.5mA toff 10 18 ns ton 8.0 12 ns ts 5.0 13 ns Hfe 5.0 Cobo 4 pF Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005
MMBT2369
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,适用于多种嵌入式应用。

2. 器件简介:该器件是意法半导体(STMicroelectronics)生产的高性能微控制器,具有多种通信接口和外设,适用于工业控制、消费电子等领域。

3. 引脚分配:该器件共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考数据手册。

4. 参数特性:工作电压范围为2.0V至3.6V,工作频率可达72MHz,内置64KB至512KB的闪存和20KB的SRAM。

5. 功能详解:具备多种功能模块,如ADC、DAC、定时器、通信接口(UART、SPI、I2C等)。

6. 应用信息:适用于需要高性能处理和丰富外设的嵌入式系统,如工业自动化、医疗设备、智能家居等。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm,适用于表面贴装技术。
MMBT2369 价格&库存

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MMBT2369ALT1G
  •  国内价格
  • 5+0.18159
  • 20+0.17826
  • 100+0.17159

库存:5