MMBT28S

MMBT28S NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ICM IB Ptot Tj TS Value 40 20 6 1 1.25 100 200 150 -55 to +150 Unit V V V A A mA mW O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 20/10/2005 MMBT28S Characteristics at Ta =25 OC Symbol DC Current Gain at VCE=1V, IC=5mA at VCE=1V, IC=100mA at VCE=1V, IC=800mA Collector Base Breakdown Voltage at IC=100µA Collector Emitter Breakdown Voltage at IC=2mA Emitter Base Breakdown Voltage at IE=100µA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VBE=6V Collector Saturation Voltage at IC=600mA, IB=20mA Base Saturation Voltage at IC=600mA, IB=20mA Base Emitter Voltage at IC=10mA, VCE=1V Gain Bandwidth Product at VCE=10V, IC=50mA Collector Base Capacitance at VCB=10V, f=1MHz COB 9 pF fT 100 MHz VBE 1.0 V VBE(sat) 1.2 V VCE(sat) 0.55 V IEBO 100 nA ICBO 100 nA V(BR)EBO 6 V V(BR)CEO 20 V V(BR)CBO 40 V hFE hFE hFE 45 200 40 1000 Min. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 20/10/2005