MMBT3904

MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the PNP transistors MMBT3906 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation Derate above 25 OC Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1) Symbol VCBO VCEO VEBO IC Ptot RθJA TJ,Ts Value 60 40 6 200 200 1) Unit V V V mA mW mW/ OC O 1.8 417 -55 to +150 C/W O C FR-5=1×0.75×0.062 in. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/12/2005 MMBT3904 Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 50 mA at VCE = 1 V, IC = 100 mA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Collector Cutoff Current at VCB = 30 V Base Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Current Gain Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz Output Capacitance at VCB = 5 V, IE = 0, f = 1 MHz Input Capacitance at VEB = 0.5 V, IC = 0, f = 1 MHz Input Impedance at IC = 1 mA, VCE = 10 V, f = 1 KHz Voltage Feedback Ratio at IC = 1 mA, VCE = 10 V, f = 1 KHz Small-Signal Current Gain at IC = 1 mA, VCE = 10 V, f = 1 KHz VBEsat VBEsat ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO fT Cobo Cibo hie hre hfe 0.65 60 40 6 300 1 0.5 100 0.85 0.95 50 50 4 8 10 8 400 V V nA nA V V V MHz pF pF KOhms X 10-4 VCEsat VCEsat 0.2 0.3 V V hFE hFE hFE hFE hFE 40 70 100 60 30 300 Symbol Min. Max. Unit SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/12/2005 MMBT3904 Characteristics at Tamb=25 OC Output Admittance at IC = 1 mA, VCE = 10 V, f = 1 KHz Noise Figure at IC = 1 µA, VCE = 5 V, RS = 1 Kohms, f = 1 KHz Delay Time Rise Time Storage Time Fall Time VCC = 3 V, VBE = -0.5 V, IC = 10 mA, IB1 = 1 mA VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA hoe NF td tr ts tf 1 40 5 35 35 200 50 µmhos dB ns ns ns ns 500 Vce=5V 400 125°C 300 200 100 0 0.1 1 10 100 -40°C VCESAT-Collector-Emitter Voltage (v) hFE -Typical Pulsed Current Gain Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.15 β=10 125°C 0.1 25°C 0.05 -40°C 0.1 1 10 100 25°C Ic-Collector Current (mA) Base-Emitter Saturation Voltage vs Collector Current 1 IC-Collector Current (mA) Base-Emitter On Voltage vs Collector Current 1 VCE=5V 0.8 -40°C 0.6 25°C 125°C 0.4 β=10 -40°C 25°C 125°C 0.8 0.6 0.4 0.1 1 10 100 VBE(ON) - Base-emitter on voltage (v) VBESAT-Base-Emitter Voltage (V) 0.2 0.1 1 10 100 IC-Collector Current (mA) Ic - Collector Current (mA) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/12/2005 MMBT3904 Collector-Cutoff Current vs Ambient Temperature VCB=30V 500 100 Capacitance vs Reverse Bias Voltage 10 f=1.0MHz ICBO-Collector Current (nA) 10 Capacitance (pF) 5 4 3 2 1 cibo cobo 100 0.1 1 0.1 25 50 75 100 125 150 1 10 Reverse Bias Voltage (V) TA-Ambient Temperature (°C) Noise Figure vs Frequency 12 12 Noise Figure vs Source Resistance Ic=10mA NF-Noise Figure (dB) NF-Noise figure (dB) 10 8 6 4 2 0 0.1 Ic=1.0mA Rs=200Ω Ic=50μA Rs=4.0kΩ Ic=0.5mA Rs=200Ω 10 8 6 4 2 0 0.1 1 10 100 Ic=5.0mA VCE=5.0V Ic=50μA Ic=100μA 1 Ic=100μA Rs=500Ω 10 100 f-Frequency (kHz) Current Gain And Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 1 Rs-Source Resistance (kΩ ) Power Dissipation vs Ambient Temperature PD-Power Dissipation (w) hfe-Current Gain (dB) hfe θ Vce=40V Ic=10mA 10 100 0 20 40 60 80 100 120 140 160 180 1000 1 SOT-223 TO-92 0.75 θ -degrees 0.5 SOT-23 0.25 0 0 25 50 75 100 125 150 f-Frequency (MHz) Temperature (°C) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/12/2005 MMBT3904 Turn-on Time vs Collector Current 500 Ic IB1=IB2=10 40V 500 Rise Time vs Collector Current Vcc=40V Ic IB1=IB2=10 Time (nS) 100 15V tr - Rise Time (nS) 100 TJ=25°C tr @ Vcc=3.0V 2.0V 10 5 1 TJ=125°C 10 td @ VCB=0V 10 100 5 1 10 100 Ic-Collector Current (mA) Storage Time vs Collector Current 500 500 Ic-Collector Current (mA) Fall Time vs Collector Current ts-Storage Time (nS) TJ=25°C 100 Ic IB1=IB2=10 TJ=125°C tf - Fall Time (nA) 100 Ic IB1=IB2=10 Vcc=40V TJ=25°C TJ=125°C 10 5 1 10 100 10 5 1 10 100 Ic-Collector Current (mA) Ic-Collector Current (mA) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/12/2005