MMBT4401W

MMBT4401W NPN Silicon General Purpose Transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot TJ Ts Value 60 40 6 600 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 2 V, IC = 500 mA Collector Cutoff Current at VCB = 35 V Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 0.1 mA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 0.1 mA Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Current Gain Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHz Collector Base Capacitance at VCB = 5 V, IE = 0, f = 1 MHz Symbol hFE hFE hFE hFE hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCEsat Min. 20 40 80 100 40 60 40 5 250 Max. 300 0.1 0.1 0.4 0.75 0.95 1.2 8 Unit µA µA V V V V VBEsat fT Ccb V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 26/12/2006 MMBT4401W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 26/12/2006