MMBT5089

MMBT5089 NPN General Purpose Amplifier For low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Total Device Dissipation Derate above 25OC Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC Ptot RθJA TJ,TS Value 25 30 4.5 100 200 2.8 357 -55 to +150 Unit V V V mA mW mW/ OC O C/W O C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBT5089 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=5V, IC=100μA at VCE=5V, IC=1mA at VCE=5V, IC=10mA Small Signal Current Gain at VCE=5V, IC=1mA, f=1KHz Collector Base Breakdown Voltage at IC=100µA Collector Emitter Breakdown Voltage at IC=1mA Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Base Emitter On Voltage at IC=10mA, VCE=5V Collector Cutoff Current at VCB=15V Emitter Cutoff Current at VEB=3V at VEB=4.5V Gain Bandwidth Product at VCE=5V, IC=500μA, f=20MHz Collector Base Capacitance at VCB=5V, f = 100KHz Emitter Base Capacitance at VBE=0.5V, f = 100KHz Noise Figure at VCE=5V, IC=100μA, Rs=10KΩ, f = 10Hz to 15.7KHz NF 2 dB Ceb 10 pF Ccb 4 pF fT 50 MHz IEBO IEBO 50 100 nA nA ICBO 50 nA VBEon 0.8 V VCEsat 0.5 V V(BR)CEO 25 V V(BR)CBO 30 V hfe 450 1800 hFE hFE hFE 400 450 400 1200 Min. Max. Unit SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBT5089 Typical pulsed current gain vs. collector current Typical pulsed current gain 1200 VCE=5V Collector emitter saturation voltage vs.collector current 0.3 Collector emitter voltage, V =10 1000 800 600 25 C 125 C 0.25 0.2 125 C 0.15 -40 C 25 C 400 -40 C 0.1 0.05 0.1 1 10 100 200 0 0.01 0.1 1 10 100 Collector current, mA Collector current, mA Base emitter saturation voltage vs.collector current Base emitter on voltage, V 1 0.8 0.6 0.4 0.2 0.1 1 10 100 =10 Base emitter on voltage vs.collector current 1 0.8 0.6 125 C VCE=5V Base emitter voltage, V -40 C -40 C 25 C 25 C 125 C 0.4 0.2 0.1 1 10 40 Collector current, mA Collector current, mA Collector cutoff current vs. ambient temperature 10 Collector current, nA VCB=45V 1 0.1 25 50 75 100 125 150 Ta ( C) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBT5089 Input and output capacitance vs. reverse bias voltage 5 f=1MHz Contours of constant gain bandwidth product 10 Capacitance, pF 4 3 2 1 Collector voltage, V 7 5 3 175MHz Cte 150MHz Cob 125MHz 100MHz 1 0 4 8 12 16 20 0.1 1 75MHz 10 100 Reverse bias voltage, V Collector current, mA Noise figure vs. frequency 10 I C=200 A Rs=10k I C=100 A Rs=10k I C=1mA Rs=500 I C=1mA Rs=5k Power dissipation vs. ambient temperature 625 Power dissipation, mW VCE=5V Noise figure, dB 8 6 4 2 0 0.0001 0.001 0.01 500 375 250 125 0.1 1 10 100 0 25 50 75 100 125 150 Frequency, MHz Temperature , C Wideband noise frequency vs. source resistance 5 1000 VCE=5V BANDWIDETH=15.7kHz Normalized collector cutoff current vs. ambient temperature Noise figure, dB 4 3 2 1 0 1,000 I C=100 A Characteristics relative to value at Ta=25 C 100,000 100 I C=30 A 10 I C=10 A 10,000 1 25 50 75 100 125 150 Source resistance, Ambient temperature , C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBT5089 Typical common emitter characteristics 1.4 1.3 1.2 1.1 h re Typical common emitter characteristics 1.5 Characteristics relative to value(Ta=25 C) IC=1mA f=1kHz VCE=5V Characteristics relative to value(VCE=5V) h oe h fe h ie h re h oe h ie 1.3 1.1 0.9 h re h fe h oe 1.0 h ie IC=1mA f=1kHz Ta=25 C h oe 0.9 h fe 0.8 0 5 10 15 20 0.7 0.5 -100 h fe h re h ie 25 -50 0 50 100 150 Collector Voltage, V Junction Temperature, C Typical common emitter characteristics 100 Characteristics relative to value(I C=1mA) f=1kHz h oe 10 h ie and h re h re 1 h oe h fe h ie h fe 0.1 0.01 0.1 1 10 100 Collector current, mA SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005