MMBT7002K

MMBT7002K N-Channel Enhancement Mode Field Effect Transistor Features • Low on resistance RDS(ON) • Low gate threshold voltage • Low input capacitance • ESD protected up to 2KV Drain Gate Source 1.Gate 2.Source 3.Drain SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulse Width ≤ 10 µs) Total Power Dissipation Operating and Storage Temperature Range Symbol VDSS VGSS ID IDM Ptot TJ, Ts Value 60 ± 20 300 800 350 - 55 to + 150 Unit V V mA mA mW O C Characteristics at Ta = 25 OC Parameter Drain Source Breakdown Voltage at ID = 10 µA Zero Gate Voltage Drain Current at VDS = 60 V Gate-Source Leakage Current at VGS = ± 20 V Gate Threshold Voltage at VDS = 10 V, ID = 250 µA Static Drain-Source On-Resistance at VGS = 10 V, ID = 500 mA at VGS = 5 V, ID = 50 mA Forward Transconductance at VDS = 10 V, ID = 200 mA Input Capacitance at VDS = 25 V, f = 1 MHz Output Capacitance at VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) gfs Ciss Coss Crss Min. 60 1 80 - Max. 1 ± 10 2.5 2 3 50 25 5 Unit V µA µA V Ω mS pF pF pF SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 04/04/2008 MMBT7002K SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 04/04/2008