MMBT8550W

MMBT8550W (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -ICM Ptot Tj TS Value 40 25 5 1.5 200 150 - 55 to + 150 Unit V V V A mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA MMBT8550CW MMBT8550DW Symbol hFE hFE hFE -VCBO -VCEO -VEBO -ICBO -ICEO -IEBO -VCE(sat) -VBE(sat) fT Min. 100 160 40 40 25 5 100 Max. 250 400 100 100 100 0.5 1.2 Unit V V V nA nA nA V V MHz at -VCE = 1 V, -IC = 800 mA Collector Base Voltage at -IC = 100 µA Collector Emitter Voltage at -IC = 100 µA Emitter Base Voltage at -IE = 100 µA Collector Base Cutoff Current at -VCB = 40 V Collector Emitter Cutoff Current at -VCE = 20 V Emitter Base Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 800 mA, -IB = 80 mA Base Emitter Saturation Voltage at -IC = 800 mA, -IB = 80 mA Transition Frequency at -VCE = 10 V, -IC = 50 mA, f = 30 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2006 MMBT8550W (1.5A) Static Characteristic Ic(mA), COLLECTOR CURRENT h FE , DC CURRENT GAIN DC Current Gain 1000 VCE=-1V -0.5 -0.4 -0.3 -0.2 -0.1 0 -0.4 -0.8 I B =-4.0mA I B =-3.5mA I B =-3.0mA I B =-2.5mA I B =-2.0mA I B =-1.5mA I B =-1.0mA I B =-0.5mA -1.2 -1.6 -2.0 100 10 1 -0.1 -1 -10 -100 -1000 I C(mA), COLLECTOR CURRENT Base-Emitter On Voltage VCE(V), COLLECTOR-EMITTR VOLTAGE Base -Emittr Saturation Voltage Collector-Emitter Saturation Voltage I C=10I B VBE(sat) VBE(sat) , VCE(sat)(mV), SATURATION VOLTAGE Ic(mA), COLLECTOR CURRENT -10000 -100 VCE=-1V -1000 -10 -100 VCE(sat) -10 -0.1 -1 -10 -100 -1000 I C(mA), COLLECTOR CURRENT Current Gain Bandwidth Product -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE (V), BASE-EMITTER VOLTAGE f T(MHz), CURRENT GAIN BANDWIDTH PRODUCT 1000 VCE=-10V 100 10 -1 -10 -100 -1000 I C(mA), COLLECTOR CURRENT SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2006