MMBTA06

MMBTA06 NPN Silicon Epitaxial Planar Small Signal Transistor for Switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range VCEO VCBO VEBO IC Ptot RθJA Tj TS Value 80 80 4 500 200 450 150 -65 to +150 Unit V V V mA mW O C/W O C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTA06 Characteristics at Tamb=25 OC Symbol DC Current Gain at IC=10mA, VCE=1V at IC=100mA, VCE=1V Collector-Emitter Cutoff Current at VCE=60V Collector-Base Cutoff Current at VCB=80V Collector-Base Breakdown Voltage at IC=100μA Collector-Emitter Breakdown Voltage at IC=1mA Emitter-Base Breakdown Voltage at IE=100μA Collector Saturation Voltage at IC=100mA, IB=10mA Base-Emitter On Voltage at IC=100mA, VCE=1V Gain-Bandwidth Product at IC=10mA, VCE=2V, f=100MHz fT 100 MHz VBE(on) 1.2 V VCE(sat) 0.25 V V(BR) EBO 4 V V(BR)CEO 80 V V(BR)CBO 80 V ICBO 100 nA ICES 100 nA hFE hFE 100 100 Min. Max. Unit SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005