MMBTA14

MMBTA14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. SOT-23 Plastic Package Absolute Maximum Ratings (Ta=25 OC) Symbol Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCES VCBO VEBO IC Ptot Tj TS Value 30 30 10 500 200 150 -55 to +150 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTA14 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=5V, IC=10mA at VCE=5V, IC=100mA Collector Emitter Breakdown Voltage at IC=100µA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=10V Collector Emitter Saturation Voltage at IC=100mA, IB=0.1mA Base Emitter On Voltage at IC=100mA, VCE=5V Current Gain Bandwidth Product at VCE=5V, IC=10mA, f=100MHz hFE hFE V(BR)CES ICBO IEBO VCE (sat) VBE(on) fT 10000 20000 30 125 100 100 1.5 2 V nA nA V V MHz Min. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005