MMBTRA101SS

MMBTRA101SS…MMBTRA106SS PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Collector (Output) Base (Input) R1 R2 Emitter (Common) Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process SOT-23 Plastic Package Resistor Values Type MMBTRA101SS MMBTRA102SS MMBTRA103SS MMBTRA104SS MMBTRA105SS MMBTRA106SS R1 (KΩ) 4.7 10 22 47 2.2 4.7 R2 (KΩ) 4.7 10 22 47 47 47 Absolute Maximum Ratings (Ta = 25 OC) Parameter Output Voltage MMBTRA101SS MMBTRA102SS Input Voltage MMBTRA103SS MMBTRA104SS MMBTRA105SS MMBTRA106SS Output Current Total Power Dissipation Junction Temperature Storage Temperature Range -IO Ptot Tj TS -VI Symbol -VO Value 50 20, -10 30, -10 40, -10 40, -10 12, -5 20, -5 100 200 150 - 55 to + 150 mA mW O Unit V V C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006 MMBTRA101SS…MMBTRA106SS Characteristics at Ta = 25 OC Parameter DC Current Gain at -VO = 5 V, -IO = 10 mA MMBTRA101SS MMBTRA102SS MMBTRA103SS MMBTRA104SS MMBTRA105SS MMBTRA106SS Symbol Min. 30 50 70 80 80 80 1 0.5 Typ. 200 Max. 500 1.8 0.88 0.36 0.18 3.6 1.8 0.3 2 2.4 3 5 1.1 1.3 Unit nA GI Output Cutoff Current at -VO = 50 V Input Current at -VI = 5 V -IO(OFF) MMBTRA101SS MMBTRA102SS MMBTRA103SS MMBTRA104SS MMBTRA105SS MMBTRA106SS -II mA Output Voltage at -IO = 10 mA, -II = 0.5 mA Input Voltage (ON) at -VO = 0.2 V, -IO = 5 mA MMBTRA101SS MMBTRA102SS MMBTRA103SS MMBTRA104SS MMBTRA105SS MMBTRA106SS MMBTRA101SS~104SS MMBTRA105SS~106SS -VO(ON) V -VI(ON) V Input Voltage (OFF) at -VO = 5 V, -IO = 0.1 mA Transition Frequency at -VO = 10 V, -IO = 5 mA 1) -VI(OFF) fT 1) V MHz Characteristic of transistor only. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006