MMBTRA111SS

MMBTRA110SS…MMBTRA114SS PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Base R1 Collector Emitter SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 50 50 5 100 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 1 mA Collector Cutoff Current at -VCB = 50 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA Transition Frequency at -VCE = 10 V, -IC = 5 mA MMBTRA110SS MMBTRA111SS MMBTRA112SS MMBTRA113SS MMBTRA114SS Symbol hFE -ICBO -IEBO -VCE(sat) fT Min. 120 Typ. 250 4.7 10 100 22 47 Max. 100 100 0.3 Unit nA nA V MHz Input Resistor R1 KΩ SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006