MMBTRA116SS

MMBTRA116SS…MMBTRA122SS PNP Silicon Epitaxial Planar Transistor for switching, interface circuit and drive circuit applications Collector (Output) Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Base (Input) R1 R2 Emitter (Common) SOT-23 Plastic Package Resistor Values Type MMBTRA116SS MMBTRA117SS MMBTRA118SS MMBTRA119SS MMBTRA120SS MMBTRA121SS MMBTRA122SS R1 (KΩ) 1 2.2 2.2 4.7 10 47 100 R2 (KΩ) 10 2.2 10 10 4.7 10 100 Absolute Maximum Ratings (Ta = 25 OC) Parameter Output Voltage MMBTRA116SS MMBTRA117SS MMBTRA118SS Input Voltage MMBTRA119SS MMBTRA120SS MMBTRA121SS MMBTRA122SS Output Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VO Value 50 - 10, 5 - 12, 10 - 12, 5 Unit V VI - 20, 7 - 30, 10 - 40, 15 - 40, 10 V -IO Ptot Tj TS 100 200 150 - 55 to + 150 mA mW O C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 29/10/2007 MMBTRA116SS…MMBTRA122SS Characteristics at Ta = 25 OC Parameter DC Current Gain at -VO = 5 V, -IO = 5 mA at -VO = 5 V, -IO = 20 mA at -VO = 5 V, -IO = 10 mA at -VO = 5 V, -IO = 10 mA at -VO = 5 V, -IO = 10 mA at -VO = 5 V, -IO = 5 mA at -VO = 5 V, -IO = 5 mA Output Cutoff Current at -VO = 50 V Input Current at -VI = 5 V MMBTRA116SS MMBTRA117SS MMBTRA118SS MMBTRA119SS MMBTRA120SS MMBTRA121SS MMBTRA122SS Symbol Min. 33 20 33 30 24 33 62 0.3 0.5 0.3 0.3 0.8 1 0.5 Typ. 250 Max. 500 7.2 3.8 3.8 1.8 0.88 0.16 0.15 0.3 0.3 0.3 0.3 0.3 0.3 0.3 3 3 3 2.5 3 5 3 Unit nA GI -IO(OFF) MMBTRA116SS MMBTRA117SS MMBTRA118SS MMBTRA119SS MMBTRA120SS MMBTRA121SS MMBTRA122SS MMBTRA116SS MMBTRA117SS MMBTRA118SS MMBTRA119SS MMBTRA120SS MMBTRA121SS MMBTRA122SS MMBTRA116SS MMBTRA117SS MMBTRA118SS MMBTRA119SS MMBTRA120SS MMBTRA121SS MMBTRA122SS MMBTRA116SS MMBTRA117SS MMBTRA118SS MMBTRA119SS MMBTRA120SS MMBTRA121SS MMBTRA122SS -II mA Output Voltage at -IO = 10 mA, -II = 0.5 mA at -IO = 10 mA, -II = 0.5 mA at -IO = 10 mA, -II = 0.5 mA at -IO = 10 mA, -II = 0.5 mA at -IO = 10 mA, -II = 0.5 mA at -IO = 10 mA, -II = 0.5 mA at -IO = 5 mA, -II = 0.25 mA Input Voltage (ON) at -VO = 0.3 V, -IO = 20 mA at -VO = 0.3 V, -IO = 20 mA at -VO = 0.3 V, -IO = 20 mA at -VO = 0.3 V, -IO = 20 mA at -VO = 0.3 V, -IO = 2 mA at -VO = 0.3 V, -IO = 2 mA at -VO = 0.3 V, -IO = 1 mA Input Voltage (OFF) at -VCC = 5 V, -IO = 100 µA -VO(ON) V -VI(ON) V -VI(OFF) V Transition Frequency at -VO = 10 V, -IO = 5 mA 1) fT 1) MHz Characteristic of transistor only. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 29/10/2007