MMBTRC102SS

MMBTRC101SS…MMBTRC106SS NPN Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Collector (Output) Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Base (Input) R1 R2 Emitter (Common) SOT-23 Plastic Package Resistor Values Type MMBTRC101SS MMBTRC102SS MMBTRC103SS MMBTRC104SS MMBTRC105SS MMBTRC106SS R1 (KΩ) 4.7 10 22 47 2.2 4.7 R2 (KΩ) 4.7 10 22 47 47 47 Absolute Maximum Ratings (Ta = 25 OC) Parameter Output Voltage MMBTRC101SS MMBTRC102SS Input Voltage MMBTRC103SS MMBTRC104SS MMBTRC105SS MMBTRC106SS Output Current Total Power Dissipation Junction Temperature Storage Temperature Range IO Ptot Tj TS VI Symbol VO Value 50 20, -10 30, -10 40, -10 40, -10 12, -5 20, -5 100 200 150 - 55 to + 150 mA mW O Unit V V C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006 MMBTRC101SS…MMBTRC106SS Characteristics at Ta = 25 OC Parameter DC Current Gain at VO = 5 V, IO = 10 mA MMBTRC101SS MMBTRC102SS MMBTRC103SS MMBTRC104SS MMBTRC105SS MMBTRC106SS Symbol Min. 30 50 70 80 80 80 1 0.5 Typ. 200 Max. 500 1.8 0.88 0.36 0.18 3.6 1.8 0.3 2 2.4 3 5 1.1 1.3 Unit nA GI Output Cutoff Current at VO = 50 V Input Current at VI = 5 V MMBTRC101SS MMBTRC102SS MMBTRC103SS MMBTRC104SS MMBTRC105SS MMBTRC106SS IO(OFF) II mA Output Voltage at IO = 10 mA, II = 0.5 mA Input Voltage (ON) at VO = 0.2 V, IO = 5 mA MMBTRC101SS MMBTRC102SS MMBTRC103SS MMBTRC104SS MMBTRC105SS MMBTRC106SS MMBTRC101SS~104SS MMBTRC105SS~106SS VO(ON) V VI(ON) V Input Voltage (OFF) at VO = 5 V, IO = 0.1 mA Transition Frequency at VO = 10 V, IO = 5 mA 1) VI(OFF) fT 1) V MHz Characteristic of transistor only. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006