MMBTRC111SS

MMBTRC110SS…MMBTRC114SS NPN Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Base R1 Collector Emitter SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 50 50 5 100 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA Collector Cutoff Current at VCB = 50 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA Transition Frequency at VCE = 10 V, IC = 5 mA MMBTRC110SS MMBTRC111SS MMBTRC112SS MMBTRC113SS MMBTRC114SS Symbol hFE ICBO IEBO VCE(sat) fT Min. 120 Typ. 250 4.7 10 100 22 47 Max. 100 100 0.3 Unit nA nA V MHz Input Resistor R1 KΩ SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006