MMBTRC233S

MMBTRC231S...MMBTRC234S NPN Silicon Epitaxial Planar Transistor For switching, audio muting, interface circuit and driver circuit applications Collector Base R1 Emitter SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 15 5 600 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 50 mA Collector Base Breakdown Voltage at IC = 50 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 50 µA Collector Base Cutoff Current at VCB = 30 V Collector Emitter Saturation Voltage at IC = 50 mA, IB = 2.5 mA Transition Frequency at VCE = 10 V, -IE = 50 mA, f = 100 MHz Input Resistor MMBTRC231S MMBTRC233S MMBTRC234S Symbol hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) fT R1 Min. 200 30 15 5 - Typ. 200 2.2 10 4.7 Max. 800 0.5 80 - Unit V V V µA mV MHz KΩ SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/07/2008