MMBTSA1576

MMBTSA1576 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Feature SOT-23 Plastic Package ․Excellent hFE linearity Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 60 50 6 150 200 150 -55 to +150 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSA1576 Characteristics at Tamb=25 OC Symbol DC Current Gain at –VCE=6V, -IC=1mA Q R S Collector Cutoff Current at –VCB=60V Emitter Cutoff Current at –VEB=6V Collector Saturation Voltage at –IC=50mA, -IB=5mA Collector Base Breakdown Voltage at –IC=50µA Collector Emitter Breakdown Voltage at –IC=1mA Emitter Base Breakdown Voltage at –IE=50µA Transition Frequency at –VCE=12V, -IE=2mA, f=30MHz Output Capacitance at –VCB=12V, f=1MHz Cob 4.0 5 pF fT 140 MHz -V(BR)EBO 6 V -V(BR)CEO 50 V -V(BR)CBO 60 V -VCE(sat) 0.5 V -IEBO 0.1 µA -ICBO 0.1 µA hFE hFE hFE 120 180 270 270 390 560 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005