MMBTSB1689W

MMBTSB1689W PNP Silicon Epitaxial Planar Transistors for low frequency amplifier and driver applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1) Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot TJ Ts Value 15 12 6 1.5 3 1) Unit V V V A A mW O 200 150 -55 to +150 C C O Single pulse, Pw = 1 ms. Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 200 mA Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE= 10 µA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 25 mA Collector Cutoff Current at -VCB = 15 V Emitter Cutoff Current at -VEB = 6 V Transition Frequency at -VCE = 2 V, IE = 200 mA, f = 100 MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCEsat -ICBO -IEBO fT Cob Min. 270 15 12 6 Typ. 400 12 Max. 680 0.2 100 100 Unit V V V V nA nA MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/01/2006 MMBTSB1689W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/01/2006