MMBTSB815

MMBTSB815 PNP Silicon Epitaxial Planar Transistor for general purpose AF amplifier SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS Value 20 15 5 700 1.5 200 150 - 55 to + 150 Unit V V V mA A mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 50 mA at -VCE = 2 V, -IC = 500 mA Collector Cutoff Current at -VCB = 15 V Emitter Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 100 µA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 5 mA, -IB = 0.5 mA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Transition Frequency at -VCE = 10 V, -IC = 50 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VCE(sat) fT Cob Min. 200 80 20 15 5 Typ. 250 13 Max. 400 100 100 35 120 Unit nA nA V V V mV mV MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/07/2007 MMBTSB815 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/07/2007