MMBTSC1621

MMBTSC1621 NPN Silicon Epitaxial Planar Switching Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Thermal Resistance Form junction to ambient in free air Junction Temperature Storage Temperature Range VCBO VCES VCEO VEBO IC Ptot Rthj-a Tj TS Value 40 40 15 4.5 500 200 500 150 -55 to +150 Unit V V V V mA mW K/W O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC1621 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=1V, IC=10mA at VCE=1V, IC=10mA, Ta= -55 OC at VCE=2V, IC=100mA Small Signal Current Gain at VCE=10V, IC=1mA, f=100MHz Collector Cutoff Current at VCB=20V at VCB=20V, Tj=125 OC Collector Saturation Voltage at IC=10mA, IB=1mA Base Saturation Voltage at IC=10mA, IB=1mA Collector Emitter Breakdown Voltage at IC=10mA Collector Emitter Breakdown Voltage at IC=10mA Collector Base Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10mA Output Capacitance at VCB=5V, f=1MHz Storage Time at ICon=IBon= -IBoff=10mA Turn-on Time at IC=10mA, IBon=3mA, VCC=3V Turn-off Time at IC=10mA, IBon=3mA, IBoff=1.5mA, VCC=3V toff 10 18 ns ton 8 12 ns ts 5 13 ns Cob 4 pF V(BR)EBO 4.5 V V(BR)CBO 40 V V(BR)CES 40 V V(BR)CEO 15 V VBE(sat) 0.7 0.85 V VCE(sat) 0.25 V ICBO 0.4 30 µA mA hfe 5 hFE hFE hFE 40 20 20 120 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005