MMBTSC3876

MMBTSC3876 NPN Silicon Epitaxial Planar Transistor for general purpose application The transistor is subdivided into three groups O, Y and G according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value 35 30 5 500 50 200 150 - 55 to + 150 Unit V V V mA mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA O Y G O Y, G Symbol hFE hFE hFE hFE hFE ICBO IEBO VCE(sat) VBE fT Ccb Min. 70 120 200 25 40 Typ. 300 7 Max. 140 240 400 0.1 0.1 0.25 1 Unit µA µA V V MHz pF at VCE = 6 V, IC = 400 mA Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Base Emitter Voltage at VCE = 1 V, IC = 100 mA Transition Frequency at VCE = 6 V, IC = 20 mA Collector Base Capacitance at VCB = 6 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/04/2007 MMBTSC3876 Power Dissipation vs Ambient Temperature 300 Power Dissipation: Ptot (mW) 250 200 150 100 50 0 0 25 50 75 100 O 125 150 Ambient Temperature: Ta ( C) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/04/2007