MMBTSC4097W

MMBTSC4097W NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 40 32 5 0.5 200 150 - 55 to + 150 Unit V V V A mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 3 V, IC = 10 mA Current Gain Group Q R Symbol hFE hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) fT Cob Min. 120 180 40 32 5 Typ. 250 6.5 Max. 270 390 1 1 0.6 Unit µA µA V V V V MHz pF Collector Base Cutoff Current at VCB = 20 V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Transition Frequency at VCE = 5 V, -IE = 20 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 26/11/2007 MMBTSC4097W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 26/11/2007