MMBTSC4226

厂商：
SEMTECH_ELEC
封装：
描述：
MMBTSC4226 - NPN Silicon Epitaxial Planar Transistor - SEMTECH ELECTRONICS LTD.

数据手册：

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数据手册
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MMBTSC4226 数据手册

MMBTSC4226 NPN Silicon Epitaxial Planar Transistor High Frequency Low Noise Amplifier. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Features: Low Noise NF=1.2dB TYP. @ f=1GHz, VCE=3V, IC=7mA High Gain S21e 2 =9.0dB TYP. @ f=1GHz, VCE=3V, IC=7mA Description: The MMBTSC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 20 12 3 100 200 150 -65 to +150 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC4226 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=3V, IC=7mA Current Gain Group Q R S Collector Cutoff Current at VCB=10V Emitter Cutoff Current at VEB=1V Gain Bandwidth Product at VCE=3V, IC=7mA Feed back Capacitance at VCE=3V, f=1MHz Insertion Power Gain at VCE=3V, IC=7mA, f=1GHz Noise Figure 1) 1) Min. Typ. Max. Unit hFE hFE hFE ICBO IEBO fT Cre S21e 2 50 80 125 3.0 7 4.5 0.7 9 1.2 100 160 250 1.0 1.0 1.5 2.5 µA µA GHz pF dB dB NF at VCE=3V, IC=7mA, f=1GHz Measured with 3 terminal bridge, Emitter and case should be grounded. Classification of hFE RANK MARKING hFE Q R23 50 ~100 R R24 80 ~160 S R25 125 ~250 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC4226 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC4226 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005

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MMBTSC4226

1. 物料型号：MMBTSC4226，NPN型硅外延平面晶体管，用于高频低噪声放大器。

2. 器件简介：MMBTSC4226是一个低供电电压晶体管，设计用于VHF、UHF低噪声放大器。

3. 引脚分配：晶体管分为基极（Base）、发射极（Emitter）和集电极（Collector）三个引脚。

4. 参数特性： - 最大额定值：包括集电极-基极电压（VCBO 20V）、集电极-发射极电压（VCEO 12V）、发射极-基极电压（VEBO 3V）、集电极电流（Ic 100mA）、总功率耗散（Ptot 200mW）和结温（Tj 150℃）。 - 特征频率（fT）：3.0-4.5GHz。 - 反馈电容（Cre）：0.7-1.5pF。 - 插入功率增益（IS21eP）：7-9dB。 - 噪声系数（NF）：1.2-2.5dB。

5. 功能详解：该晶体管具有低噪声特性，典型值在1GHz频率下，噪声系数为1.2dB，增益为9.0dB。

6. 应用信息：适用于VHF、UHF频段的低噪声放大器。

7. 封装信息：SOT-23塑料封装。

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