MMBTSC5084

MMBTSC5084

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    MMBTSC5084 - NPN Silicon Epitaxial Planar Transistor - SEMTECH ELECTRONICS LTD.

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBTSC5084 数据手册
MMBTSC5084 NPN Silicon Epitaxial Planar Transistor for low noise, high gain amplifier at VHF~UHF band. The transistor is subdivided into two groups O and Y, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Base Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IB IC Ptot Tj TS Value 20 12 3 40 80 200 125 -55 to +125 Unit V V V mA mA mW O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC5084 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=10V, IC=20mA Current Gain Group O Y Collector Cutoff Current at VCB=10V Emitter Cutoff Current at VEB=1.0V Transition Frequency at VCE=10V, IC=20mA Reverse Transfer Capacitance at VCB=10V, f=1MHz Output Capacitance at VCB=10V, f=1MHz Insertion Gain at VCE=10V, IC=20mA, f=500MHz Insertion Gain at VCE=10V, IC=20mA, f=1.0GHz Noise Figure at VCE=10V, IC=5mA, f=500MHz Noise Figure at VCE=10V, IC=5mA, f=1.0GHz 1) 1) 1) Min. Typ. Max. Unit hFE hFE ICBO IEBO fT Cre Cob S21e S21e NF1 NF2 2 1 80 120 5 7.5 - 7 0.65 1 16.5 11 1 1.1 160 240 1 1 1.15 2 µA µA GHz pF pF dB dB dB dB 2 2 Cre is measured by 3 terminal method with capacitance bridge. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005
MMBTSC5084
1. 物料型号:MMBTSC5084 2. 器件简介:NPN型硅外延平面晶体管,用于VHF至UHF频段的低噪声、高增益放大器。该晶体管根据直流电流增益分为O和Y两组。 3. 引脚分配:1. 基极(Base),2. 发射极(Emitter),3. 集电极(Collector)。采用SOT-23塑料封装。 4. 参数特性: - 直流电流增益(hFE):O组最小80,典型值120,最大240;Y组最小160,典型值240,最大400。 - 集电极截止电流(ICBO):在VCB=10V时为1μA。 - 发射极截止电流(IEBO):在VEB=1.0V时为1μA。 - 转换频率(fT):在VCE=10V,IC=20mA时为5-7GHz。 - 反向传输电容(Cre):在VCB=10V,f=1MHz时为0.65-1.15pF。 - 输出电容(Cob):在VCB=10V,f=1MHz时为1pF。 5. 功能详解: - 插入增益(S21e):在VCE=10V,IC=20mA,f=500MHz时为16.5dB;在f=1.0GHz时为7.5-11dB。 - 噪声系数(NF):在VCE=10V,IC=5mA,f=500MHz时为1dB;在f=1.0GHz时为1.1-2dB。 6. 应用信息:适用于VHF至UHF频段的低噪声、高增益放大器。 7. 封装信息:SOT-23塑料封装。
MMBTSC5084 价格&库存

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