MMBTSC5345W

MMBTSC5345W NPN Silicon Epitaxial Planar Transistor for RF amplifier The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 20 4 20 200 150 - 55 + 150 Unit V V V mA mW O C C O Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group R O Y Symbol hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB Min. 40 70 120 30 20 4 Typ. 550 1.4 Max. 80 140 240 0.5 0.5 0.3 Unit V V V µA µA V MHz pF Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 5 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Transition Frequency at VCE = 6 V, -IE = 1 mA Collector Output Capacitance at VCB = 6 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/05/2006 MMBTSC5345W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/05/2006