MMBTSC945W

MMBTSC945W NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 150 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group R O Y P L Symbol hFE hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB NF Min. 40 70 120 200 350 60 50 5 Typ. 300 2.5 4 Max. 80 140 240 400 700 0.1 0.1 0.3 Unit V V V µA µA V MHz pF dB Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Cutoff Current at VCB = 40 V Emitter Cutoff Current at VEB = 3 V Collector Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Output Capacitance at VCB = 6 V, f = 1 MHz Noise Figure at VCE = 6 V, IE = 0.5 mA, f = 1 KHz, RS = 500 Ω SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/09/2006 MMBTSC945W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/09/2006