MMBTSD123

MMBTSD123 NPN Silicon Epitaxial Planar Transistor Low saturation medium current application Suitable for low voltage large current drivers SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 20 15 6.5 1 200 150 - 55 to + 150 Unit V V V A mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA Collector Cutoff Current at VCB = 20 V Emitter Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 50 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 50 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Transition Frequency at VCE = 5 V, IC = 50 mA Output Capacitance at VCB = 10 V, f = 1 MHz Symbol hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) fT COB Min. 150 20 15 6.5 - Typ. 260 5 Max. 100 100 0.3 - Unit nA nA V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/09/2007 MMBTSD123 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/09/2007