MMBTSD471

MMBTSD471 NPN Silicon Epitaxial Planar Transistor Audio Frequency Power amplifier applications. The transistor is subdivided into three group O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. SOT-23 Plastic Package Absolute Maximum Ratings (Ta=25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 40 30 5 1 200 150 -55 to +150 Unit V V V A mW O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSD471 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=1V, IC=100mA Current Gain Group O Y G Collector Emitter Breakdown Voltage at IC=10mA Collector Base Breakdown Voltage at IC=100µA Emitter Base Breakdown Voltage at IE=100µA Collector Cutoff Current at VCB=30V Collector Saturation Voltage at IC=1.0A, IB=100mA Base Saturation Voltage at IC=1.0A, IB=100mA Collector Output Capacitance at VCB=6V, f=1MHz Transition Frequency at VCE=6V, IC=10mA fT 130 MHz COB 18 pF VBE(sat) 1.2 V VCE(sat) 0.5 V ICBO 0.1 µA V(BR)EBO 5 V V(BR)CBO 40 V V(BR)CEO 30 V hFE hFE hFE 90 135 200 180 270 400 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005