MMDT1N434

MMDT1N434 NPN Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Collector (Output) Base (Input) R1 R2 Emitter (Common) Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 50 50 6 100 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 5 mA Collector Base Cutoff Current at VCB = 50 V Collector Emitter Breakdown Voltage at IC = 100 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA Input On Voltage at VCE = 0.2 V, IC = 5 mA Input Off Voltage at VCE = 5 V, IC = 100 µA Input Resistor Input Resistor Resistance Ratio Transition Frequency at VCE = 10 V, -IE = 5 mA, f = 100 MHz Symbol hFE ICBO V(BR)CEO VCE(sat) VI(on) VI(off) R1 R2 R 2 / R1 fT Min. 50 50 0.5 3.29 15.4 3.6 Typ. 4.7 22 4.5 250 Max. 0.1 0.3 1.7 6.11 28.6 5.5 Unit µA V V V V KΩ KΩ MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 14/01/2008