MMDT511DW

MMDT5110W…MMDT511ZW PNP Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MMDT5110W MMDT5111W MMDT5112W MMDT5113W MMDT5114W MMDT5115W MMDT5116W MMDT5117W MMDT5118W MMDT5119W R1 (KΩ) 47 10 22 47 10 10 4.7 22 0.51 1 R2 (KΩ) 10 22 47 47 5.1 10 Type MMDT511DW MMDT511EW MMDT511FW MMDT511HW MMDT511LW MMDT511MW MMDT511NW MMDT511TW MMDT511VW MMDT511ZW R1 (KΩ) 47 47 4.7 2.2 4.7 2.2 4.7 22 2.2 4.7 R2 (KΩ) 10 22 10 10 4.7 47 47 47 2.2 22 Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -IC Ptot Tj TS Value 50 50 100 200 150 - 55 to + 150 Unit V V mA mW O C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007 MMDT5110W…MMDT511ZW Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 10 V, -IC = 5 mA MMDT5118/511L/511VW MMDT5119/511D/511F/511HW MMDT5111W MMDT5112/511EW MMDT511ZW MMDT5113/5114/511MW MMDT511N/511TW 1) MMDT5110/5115/5116/5117W Symbol Min. 20 30 35 60 60 80 80 160 50 50 Typ. Max. 200 400 460 100 0.01 0.1 0.2 0.4 0.5 1 1.5 2 0.3 3 2.5 2.5 5 4 3 3 3 1.1 1.7 1.3 1.4 Unit nA hFE Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 6 V MMDT5110/5115/5116/5117W MMDT5113W MMDT5112/5114/511D/511E/511M/511N/511TW -ICBO MMDT511ZW MMDT5111W MMDT511F/511HW MMDT5119W MMDT5118/511L/511VW Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA Input Voltage (ON) at -VO = 0.3 V, -IO = 20 mA at -VO = 0.3 V, -IO = 20 mA at -VO = 0.3 V, -IO = 2 mA at -VO = 0.3 V, -IO = 2 mA at -VO = 0.3 V, -IO = 2 mA at -VO = 0.3 V, -IO = 10 mA at -VO = 0.2 V, -IO = 5 mA at -VO = 0.3 V, -IO = 2 mA at -VO = 0.3 V, -IO = 5 mA at -VO = 0.2 V, -IO = 5 mA at -VO = 0.3 V, -IO = 5 mA at -VO = 0.3 V, -IO = 1 mA 1) -IEBO mA -V(BR)CBO -V(BR)CEO -VCEsat V V V MMDT511V/511L/5119/511H/5118W MMDT511FW MMDT511TW MMDT511DW MMDT511EW MMDT5111W MMDT5112W MMDT5113W MMDT511MW MMDT511ZW MMDT511NW MMDT5114W -VI(ON) V hFE Rank Classification: Q: 160~260, R: 210~340, S: 290~460, No-rank: 160~460 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007 MMDT5110W…MMDT511ZW Characteristics at Ta = 25 OC Parameter Input Voltage (OFF) at -VCC = 5 V, -IO = 100 µA MMDT511V/511L/5111/5112/5113W MMDT5118/5119/511M/511Z/511NW MMDT511H/511F/5114W MMDT511TW MMDT511DW MMDT511EW Symbol Min. 0.5 0.5 0.3 0.4 1 0.8 Typ. 250 0.51 1 2.2 4.7 10 22 47 0.047 0.1 0.1 0.21 0.21 0.47 0.47 1 1 0.22 2.14 4.7 Max. Unit -VI(OFF) V Transition Frequency at -VCB = 10 V, -IE = 5 mA, f = 100 MHz Input Resistance MMDT5118W MMDT5119W MMDT511H/511M/511VW MMDT5116/511F/511L/511N/511ZW MMDT5111/5114/5115W MMDT5112/5117/511TW MMDT5110/5113/511D/511EW Resistance Ratio MMDT511MW MMDT511NW MMDT5118/5119W MMDT511ZW MMDT5114W MMDT511TW MMDT511FW MMDT511VW MMDT5111/5112/5113/511LW MMDT511HW MMDT511EW MMDT511DW fT MHz R1 - 30% + 30% KΩ R1/R2 0.08 0.17 0.37 0.8 0.17 1.7 3.7 0.12 0.25 0.57 1.2 0.27 2.6 5.7 - SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007