MMDT521TW

MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MMDT5210W MMDT5211W MMDT5212W MMDT5213W MMDT5214W MMDT5215W MMDT5216W MMDT5217W MMDT5218W MMDT5219W R1 (KΩ) 47 10 22 47 10 10 4.7 22 0.51 1 R2 (KΩ) 10 22 47 47 5.1 10 Type MMDT521DW MMDT521EW MMDT521FW MMDT521KW MMDT521LW MMDT521MW MMDT521NW MMDT521TW MMDT521VW MMDT521ZW R1 (KΩ) 47 47 4.7 10 4.7 2.2 4.7 22 2.2 4.7 R2 (KΩ) 10 22 10 4.7 4.7 47 47 47 2.2 22 Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO IC Ptot Tj TS Value 50 50 100 200 150 - 55 to + 150 Unit V V mA mW O C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007 MMDT5210W…MMDT521ZW Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 5 mA MMDT5218/521K/521L/521VW MMDT5219/521D/521FW MMDT5211W MMDT5212/521EW MMDT521ZW MMDT5213/5214/521MW MMDT521N/521TW 1) MMDT5210/5215/5216/5217W Symbol Min. 20 30 35 60 60 80 80 160 50 50 Typ. 250 Max. 200 400 460 100 0.01 0.1 0.2 0.4 0.5 1 1.5 2 0.3 3 2.5 2.5 5 4 3 3 3 1.1 1.7 1.3 1.4 Unit nA hFE Collector Base Cutoff Current at VCB = 50 V Emitter Base Cutoff Current at VEB = 6 V MMDT5210/5215/5216/5217W MMDT5213W MMDT5212/5214/521D/521E/521M/521N/521TW ICBO MMDT521ZW MMDT5211W MMDT521F/521KW MMDT5219W MMDT5218/521L/521VW Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 2 mA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA Transition Frequency at VCB = 10 V, -IE = 5 mA, f = 100 MHz Input Voltage (ON) at VO = 0.3 V, IO = 20 mA MMDT521V/521L/5219/5218W at VO = 0.3 V, IO = 20 mA MMDT521FW at VO = 0.3 V, IO = 2 mA MMDT521TW at VO = 0.3 V, IO = 2 mA MMDT521DW at VO = 0.3 V, IO = 2 mA MMDT521EW at VO = 0.3 V, IO = 10 mA MMDT5211W at VO = 0.2 V, IO = 5 mA MMDT5212W at VO = 0.3 V, IO = 2 mA MMDT5213/521KW at VO = 0.3 V, IO = 5 mA MMDT521MW at VO = 0.2 V, IO = 5 mA MMDT521ZW at VO = 0.3 V, IO = 5 mA MMDT521NW at VO = 0.3 V, IO = 1 mA MMDT5214W 1) IEBO mA V(BR)CBO V(BR)CEO VCEsat fT V V V MHz -VI(ON) V hFE Rank Classification: Q: 160~260, R: 210~340, S: 290~460, No-rank: 160~460 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007 MMDT5210W…MMDT521ZW Characteristics at Ta = 25 OC Parameter Input Voltage (OFF) at VCC = 5 V, IO = 100 µA MMDT521V/521L/5211/5212/5213W MMDT5218/5219/521M/521Z/521NW MMDT521F/5214W MMDT521TW MMDT521DW MMDT521K/521EW MMDT5218W MMDT5219W MMDT521M/521V MMDT5216/521F/521L/521N/521ZW MMDT5211/5214/5215/521KW MMDT5212/5217/521TW MMDT5210/5213/521D/521EW MMDT521MW MMDT521NW MMDT5218/5219W MMDT521ZW MMDT5214W MMDT521TW MMDT521FW MMDT521VW MMDT5211/5212/5213/521LW MMDT521KW MMDT521EW MMDT521DW Symbol Min. 0.5 0.5 0.3 0.4 1 0.8 Typ. 0.51 1 2.2 4.7 10 22 47 0.047 0.1 0.1 0.21 0.21 0.47 0.47 1 1 2.13 2.14 4.7 Max. Unit -VI(OFF) V Input Resistance R1 - 30% + 30% KΩ Resistance Ratio R1/R2 0.08 0.17 0.37 0.8 1.7 1.7 3.7 0.12 0.25 0.57 1.2 2.6 2.6 5.7 - SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007