MMDT5P333

MMDT5P333 PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Collector (Output) Base (Input) R1 R2 Emitter (Common) Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO VEBO -IC Ptot Tj TS Value 50 50 - 20, 6 500 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 50 mA Collector Base Cutoff Current at -VCB = 50 V Base Emitter Current at -VBE = 5 V Collector Emitter Saturation Voltage at -IC = 50 mA, -IB = 2.5 mA Input On Voltage at -VCE = 0.3 V, -IC = 20 mA Input Off Voltage at -VCE = 5 V, -IC = 100 µA Input Resistor Input Resistor Resistance Ratio Transition Frequency at VCE = 10 V, -IE = 5 mA, f = 100 MHz Symbol hFE -ICBO -IBE -VCE(sat) -VI(on) -VI(off) R1 R2 R 2 / R1 fT Min. 56 0.3 2.31 7.5 2.4 Typ. 3.3 10 3 200 Max. 0.1 2.4 0.3 2 4.29 12.5 3.7 Unit µA mA V V V KΩ KΩ MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 14/01/2008