MMDTA115W

MMDTA115W PNP Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MMDTA115W R1 (KΩ) 100 R2 (KΩ) 100 Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCEO VEBO -IC Ptot Tj TS Value 50 - 40 to + 10 100 200 150 - 55 to + 150 Unit V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 5 mA Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 5 mA, -IB = 0.25 mA Input Off Voltage at -VCE = 5 V, -IC = 100 µA Input On Voltage at -VCE = 0.3 V, -IC = 1 mA Transition Frequency at -VCE = 10 V, IE = 5 mA, f = 100 MHz Input Resistance Resistance Ratio Symbol hFE -ICBO -IEBO -VCEsat -VI(off) -VI(on) fT R1 R2/R1 Min. 82 0.5 70 0.8 Typ. 250 100 1 Max. 500 0.15 0.3 3 130 1.2 Unit nA mA V V V MHz KΩ - SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 11/04/2007