MMDTC123W

MMDTC123W NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values R1 (KΩ) R2 (KΩ) 2.2 47 Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Input Voltage Positive Negative Symbol VCBO VCEO VEBO VI IC Ptot Tj TS Value 50 50 10 + 12 -5 100 200 150 - 65 to + 150 Unit V V V V mA mW O Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 10 mA Collector Base Cutoff Current at VCB = 50 V Collector Emitter Cutoff Current at VCE = 30 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 5 mA, IB = 0.25 mA Input Off Voltage at VCE = 5 V, IC = 100 µA Input On Voltage at VCE = 0.3 V, IC = 5 mA Collector Capacitance at VCB = 10 V, f = 1 MHz Input Resistance Resistance Ratio Symbol hFE ICBO ICEO IEBO VCEsat VI(off) VI(on) CC R1 R2/R1 Min. 100 1.1 1.54 17 Typ. 2.2 21 Max. 100 1 180 0.1 0.5 2.5 2.86 26 Unit nA µA µA V V V pF KΩ - SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 28/11/2006